320 × 256 avalanche array photodetector on the basis of...

Journal of Communications Technology and Electronics 2016 / 3 Vol. 61; Iss. 3

320 × 256 avalanche array photodetector on the basis of ternary alloys of the A3B5group with an InGaAs absorbing layer and an InAlAs barrier layer

Iakovleva, N. I., Boltar, K. O., Sedneva, M. V., Lopukhin, A. A., Korotaev, E. D.
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Volume:
61
Language:
english
Journal:
Journal of Communications Technology and Electronics
DOI:
10.1134/S1064226916030219
Date:
March, 2016
File:
PDF, 616 KB
english, 2016
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