Role of a Si0.95Ge0.05 epilayer cap on boron diffusion in...

Materials Science in Semiconductor Processing 2016 / 06 Vol. 48

Role of a Si0.95Ge0.05 epilayer cap on boron diffusion in silicon under inert and dry oxidizing ambient annealing

Hasanuzzaman, Mohammad, Haddara, Yaser M., Knights, Andrew P.
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Volume:
48
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2016.03.011
Date:
June, 2016
File:
PDF, 558 KB
english, 2016
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