Memory Devices: In Situ Tuning of Switching Window in a...

Advanced Materials 2015 / 12 Vol. 27; Iss. 47

Memory Devices: In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device (Adv. Mater. 47/2015)

Tian, He, Zhao, Haiming, Wang, Xue-Feng, Xie, Qian-Yi, Chen, Hong-Yu, Mohammad, Mohammad Ali, Li, Cheng, Mi, Wen-Tian, Bie, Zhi, Yeh, Chao-Hui, Yang, Yi, Wong, H.-S. Philip, Chiu, Po-Wen, Ren, Tian-Li
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
27
Journal:
Advanced Materials
DOI:
10.1002/adma.201570323
Date:
December, 2015
File:
PDF, 1.03 MB
2015
Conversion to is in progress
Conversion to is failed