[IEEE 2016 IEEE International Solid-State Circuits Conference (ISSCC) - San Francisco, CA, USA (2016.1.31-2016.2.4)] 2016 IEEE International Solid-State Circuits Conference (ISSCC) - 10.4 A 12Gb/s 0.9mW/Gb/s wide-bandwidth injection-type CDR in 28nm CMOS with reference-free frequency capture
Masuda, Takashi, Shinoda, Ryota, Chatwin, Jeremy, Wysocki, Jacob, Uchino, Koki, Miyajima, Yoshifumi, Ueno, Yosuke, Maruko, Kenichi, Zhou, Zhiwei, Matsumoto, Hideyuki, Suzuki, Hideyuki, Shoji, NorioYear:
2016
Language:
english
DOI:
10.1109/ISSCC.2016.7417970
File:
PDF, 2.41 MB
english, 2016