Punch-through and junction breakdown characteristics for uniaxial strained nano-node metal-oxide-semiconductor field-effect transistors on (100) wafers
Wang, Mu Chun, Huang, Heng Sheng, Peng, Min Ru, Wang, Shea Jue, Chen, Tsao Yeh, Liao, Wen Shiang, Yang, Hsin Chia, Liu, Chuan HsiVolume:
49
Year:
2014
Language:
english
Journal:
International Journal of Materials and Product Technology
DOI:
10.1504/ijmpt.2014.062939
File:
PDF, 2.91 MB
english, 2014