High Performance HfO2 Back Gated Multilayer MoS2...

IEEE Electron Device Letters 2016

High Performance HfO2 Back Gated Multilayer MoS2 transistors

Kolla, Lakshmi Ganapathi, Bhattacharjee, Shubhadeep, S, Mohan, Bhat, Navakanta

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Year:

2016

Language:

english

Journal:

IEEE Electron Device Letters

DOI:

10.1109/LED.2016.2553059

File:

PDF, 502 KB

english, 2016

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