Effects of erbium doping of indium tin oxide electrode in resistive random access memory
Chen, Po-Hsun, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Pan, Chih-Hung, Lin, Chih-Yang, Jin, Fu-Yuan, Chen, Min-Chen, Huang, Hui-Chun, Lo, Ikai, Zheng, Jin-Cheng, Sze, Simon M.Volume:
9
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.9.034202
Date:
March, 2016
File:
PDF, 1.32 MB
english, 2016