TEM study of defect structure of GaN epitaxial films grown...

Journal of Crystal Growth 2016 / 07 Vol. 445

TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern

Mynbaeva, M.G., Kremleva, A.V., Kirilenko, D.A., Sitnikova, A.A., Pechnikov, A.I., Mynbaev, K.D., Nikolaev, V.I., Bougrov, V.E., Lipsanen, H., Romanov, A.E.
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Volume:
445
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2016.04.011
Date:
July, 2016
File:
PDF, 2.65 MB
english, 2016
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