Heteroepitaxial growth of GaN on vertical Si{110} sidewalls...

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Journal of Crystal Growth 2016 / 4

Heteroepitaxial growth of GaN on vertical Si{110} sidewalls formed on trench-etched Si(001) substrates

Gagnon, Jarod C., Shen, Haoting, Yuwen, Yu, Wang, Ke, Mayer, Theresa S., Redwing, Joan M.
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Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2016.04.027
Date:
April, 2016
File:
PDF, 977 KB
english, 2016
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