InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes (λ0.1=5.2μm, 300K)...

Infrared Physics & Technology 2015 / 11 Vol. 73

InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes (λ0.1=5.2μm, 300K) operating in the 77–353К temperature range

Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
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Volume:
73
Language:
english
Journal:
Infrared Physics & Technology
DOI:
10.1016/j.infrared.2015.09.017
Date:
November, 2015
File:
PDF, 1.32 MB
english, 2015
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