[IEEE 2015 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2015.12.7-2015.12.9)] 2015 IEEE International Electron Devices Meeting (IEDM) - GaNFET compact model for linking device physics, high voltage circuit design and technology optimization
Radhakrishna, Ujwal, Lim, Seungbum, Choi, Pilsoon, Palacios, Tomas, Antoniadis, DimitriYear:
2015
Language:
english
DOI:
10.1109/IEDM.2015.7409664
File:
PDF, 2.28 MB
english, 2015