![](/img/cover-not-exists.png)
[IEEE 2015 Symposium on VLSI Technology - Kyoto, Japan (2015.6.16-2015.6.18)] 2015 Symposium on VLSI Technology (VLSI Technology) - Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime
Qiu, Hao, Mizutani, Tomoko, Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Oda, Hidekazu, Kamohara, Shiro, Sugii, Nobuyuki, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, ToshiroYear:
2015
Language:
english
DOI:
10.1109/VLSIT.2015.7223694
File:
PDF, 5.10 MB
english, 2015