Properties of AlN films deposited by reactive ion-plasma...

Semiconductors 2015 / 10 Vol. 49; Iss. 10

Properties of AlN films deposited by reactive ion-plasma sputtering

Bert, N. A., Bondarev, A. D., Zolotarev, V. V., Kirilenko, D. A., Lubyanskiy, Ya. V., Lyutetskiy, A. V., Slipchenko, S. O., Petrunov, A. N., Pikhtin, N. A., Ayusheva, K. R., Arsentyev, I. N., Tarasov,
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Volume:
49
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782615100036
Date:
October, 2015
File:
PDF, 1.07 MB
english, 2015
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