The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy
Lundin, W. V., Zavarin, E. E., Popov, M. G., Troshkov, S. I., Sakharov, A. V., Smirnova, I. P., Kulagina, M. M., Davydov, V. Yu., Smirnov, A. N., Tsatsulnikov, A. F.Volume:
41
Language:
english
Journal:
Technical Physics Letters
DOI:
10.1134/S1063785015100247
Date:
October, 2015
File:
PDF, 511 KB
english, 2015