Structural-relaxation-driven electron doping of amorphous oxide semiconductors by increasing the concentration of oxygen vacancies in shallow-donor states
Yeon, Han-Wool, Lim, Seung-Min, Jung, Jung-Kyu, Yoo, Hyobin, Lee, Young-Joo, Kang, Ho-Young, Park, Yong-Jin, Kim, Miyoung, Joo, Young-ChangVolume:
8
Language:
english
Journal:
NPG Asia Materials
DOI:
10.1038/am.2016.11
Date:
March, 2016
File:
PDF, 2.22 MB
english, 2016