Effect of Fluorine in a Gate Insulator on the Reliability...

ECS Journal of Solid State Science and Technology 2016 Vol. 5; Iss. 5

Effect of Fluorine in a Gate Insulator on the Reliability of Indium-Gallium-Zinc Oxide Thin-Film Transistors

Yamazaki, Haruka, Ishikawa, Yasuaki, Fujii, Mami N., Bermundo, Juan Paolo, Takahashi, Eiji, Andoh, Yasunori, Uraoka, Yukiharu
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Volume:
5
Year:
2016
Language:
english
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2.0241605jss
File:
PDF, 669 KB
english, 2016
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