Improving the operational characteristic stability in...

Japanese Journal of Applied Physics 2016 / 04 Vol. 55; Iss. 4

Improving the operational characteristic stability in Al/Au/ZnO/Al resistive random access memory devices

Wu, Cheng-Yen, You, Hsin-Chiang, Lin, Gong-Kai, Yang, Wen-Luh
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Volume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.044101
Date:
April, 2016
File:
PDF, 1.15 MB
english, 2016
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