Effect of different constant compliance current for hopping...

Applied Physics A: Materials Science & Processing 2016 / 3 Vol. 122; Iss. 3

Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOxthin film RRAM devices

Chen, Kai-Huang, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Liao, Kuo-Hsiao, Syu, Yong-En, Sze, Simon M.
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Volume:
122
Language:
english
Journal:
Applied Physics A
DOI:
10.1007/s00339-016-9768-5
Date:
March, 2016
File:
PDF, 1.50 MB
english, 2016
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