Effect of phosphorus on electrical properties of undoped...

Materials Science and Technology 1996 / 02 Vol. 12; Iss. 2

Effect of phosphorus on electrical properties of undoped InP grown at low temperature by atomic layer molecular beam epitaxy

Postigo, P. A., García-Péerez, F., Dotor, M. L., Golmayo, D., Briones, F.
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Volume:
12
Language:
english
Journal:
Materials Science and Technology
DOI:
10.1179/mst.1996.12.2.187
Date:
February, 1996
File:
PDF, 535 KB
english, 1996
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