Tunable single hole regime of a silicon field effect...

Applied Physics Express 2016 / 01 Vol. 9; Iss. 1

Tunable single hole regime of a silicon field effect transistor in standard CMOS technology

Turchetti, Marco, Homulle, Harald, Sebastiano, Fabio, Ferrari, Giorgio, Charbon, Edoardo, Prati, Enrico
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Volume:
9
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.9.014001
Date:
January, 2016
File:
PDF, 700 KB
english, 2016
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