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New type of defects in SiC grown by the PVT method
Zhu, L N, Li, Heqing, Hu, B Q, Wu, X, Chen, X LVolume:
17
Language:
english
Journal:
Journal of Physics: Condensed Matter
DOI:
10.1088/0953-8984/17/10/L01
Date:
March, 2005
File:
PDF, 828 KB
english, 2005