Gallium nitride surface protection during RTA annealing...

Semiconductor Science and Technology 2016 / 04 Vol. 31; Iss. 4

Gallium nitride surface protection during RTA annealing with a GaO x N y cap-layer

Khalfaoui, Wahid, Oheix, T, Cayrel, F, Benoit, R, Yvon, A, Collard, E, Alquier, D
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Volume:
31
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/31/4/045008
Date:
April, 2016
File:
PDF, 1.84 MB
english, 2016
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