On the turn-around phenomenon in n-MOS transistors under NBTI conditions
Benabdelmoumene, A., Djezzar, B., Chenouf, A., Tahi, H., Zatout, B., Kechouane, M.Volume:
121
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2016.04.001
Date:
July, 2016
File:
PDF, 1.55 MB
english, 2016