Accurate lifetime prediction for channel hot carrier stress on sub-1nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer
Luo, Weichun, Yang, Hong, Wang, Wenwu, Xu, Yefeng, Tang, Bo, Ren, Shangqing, Xu, Hao, Wang, Yanrong, Qi, Luwei, Yan, Jiang, Zhu, Huilong, Zhao, Chao, Chen, Dapeng, Ye, TianchunLanguage:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2016.03.008
Date:
May, 2016
File:
PDF, 1.54 MB
english, 2016