GeSn Quantum Well P-Channel Tunneling FETs Fabricated on...

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IEEE Electron Device Letters 2016

GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) with Improved Subthreshold Swing

Han, Genquan, Wang, Yibo, Liu, Yan, Zhang, Chunfu, Feng, Qian, Liu, Mingshan, Zhao, Shenglei, Cheng, Buwen, Zhang, Jincheng, Hao, Yue
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Year:
2016
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2016.2558823
File:
PDF, 1.51 MB
english, 2016
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