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[IEEE 2016 IEEE International Solid-State Circuits Conference (ISSCC) - San Francisco, CA, USA (2016.1.31-2016.2.4)] 2016 IEEE International Solid-State Circuits Conference (ISSCC) - 7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory
Tanaka, Tomoharu, Helm, Mark, Vali, Tommaso, Ghodsi, Ramin, Kawai, Koichi, Park, Jae-Kwan, Yamada, Shigekazu, Pan, Feng, Einaga, Yuichi, Ghalam, Ali, Tanzawa, Toru, Guo, Jason, Ichikawa, Takaaki, Yu,Year:
2016
Language:
english
DOI:
10.1109/ISSCC.2016.7417947
File:
PDF, 830 KB
english, 2016