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Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition
Hazbun, Ramsey, Hart, John, Hickey, Ryan, Ghosh, Ayana, Fernando, Nalin, Zollner, Stefan, Adam, Thomas N, Kolodzey, JamesVolume:
444
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2016.03.018
Date:
June, 2016
File:
PDF, 1.89 MB
english, 2016