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[IEEE 2015 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2015.12.7-2015.12.9)] 2015 IEEE International Electron Devices Meeting (IEDM) - Gate-all-around CMOS (InAs n-FET and GaSb p-FET) based on vertically-stacked nanowires on a Si platform, enabled by extremely-thin buffer layer technology and common gate stack and contact modules
Goh, Kian-Hui, Tan, Kian-Hua, Yadav, Sachin, Annie,, Yoon, Soon-Fatt, Liang, Gengchiau, Gong, Xiao, Yeo, Yee-ChiaYear:
2015
Language:
english
DOI:
10.1109/iedm.2015.7409704
File:
PDF, 1.12 MB
english, 2015