Molecular dynamics study on the thickness of damage layer...

Materials Science in Semiconductor Processing 2016 / 08 Vol. 51

Molecular dynamics study on the thickness of damage layer in multiple grinding of monocrystalline silicon

Guo, Xiaoguang, Li, Qiang, Liu, Tao, Zhai, Changheng, Kang, Renke, Jin, Zhuji
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Volume:
51
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2016.04.013
Date:
August, 2016
File:
PDF, 1.38 MB
english, 2016
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