Performance Improvement of Phase Change Memory Cell by...

Materials Science Forum 2016 / 3 Vol. 848

Performance Improvement of Phase Change Memory Cell by Using a Tantalum Pentoxide Buffer Layer

Zhang, Zhong Hua, Song, San Nian, Song, Zhi Tang, Li, Le, Shen, Lan Lan, Guo, Tian Qi, Cheng, Yan, Lv, Shi Long, Wu, Liang Cai, Liu, Bo, Feng, Song Lin
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Volume:
848
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.848.425
Date:
March, 2016
File:
PDF, 778 KB
english, 2016
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