Spatially-resolved EELS and EDS Analysis of HfOxNy Gate...

Microscopy and Microanalysis 2004 / 8 Vol. 10; Iss. S02

Spatially-resolved EELS and EDS Analysis of HfOxNy Gate Dielectrics Deposited by MOCVD using [(C2H5)2N]4Hf with NO and O2

Wu, X, Couillard, M., Lee, M.-S., Chen, J.-H., Botton, G.A., Landheer, D., Lu, Z.-H., Ng, W.-T., Chao, T.-S.
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Volume:
10
Language:
english
Journal:
Microscopy and Microanalysis
DOI:
10.1017/s1431927604884848
Date:
August, 2004
File:
PDF, 326 KB
english, 2004
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