Physical Properties of Hafnium-Silicate Transistor Gate...

Microscopy and Microanalysis 2005 / 8 Vol. 11; Iss. S02

Physical Properties of Hafnium-Silicate Transistor Gate Dielectric Stacks after Thermal Processing

Foran, B, Campin, M, Clark, M, Lian, G, Johnson, C, Bersuker, G, Lysaght, P, Rhoad, R
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Volume:
11
Language:
english
Journal:
Microscopy and Microanalysis
DOI:
10.1017/s1431927605508870
Date:
August, 2005
File:
PDF, 927 KB
english, 2005
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