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Application of Lattice Strain Analysis of Semiconductor Device by Nano-beam Diffraction Using the 300 kV Cold-FE TEM
Sato, T, Matsumoto, H, Konno, M, Fukui, M, Nagaoki, I, Taniguchi, YVolume:
15
Language:
english
Journal:
Microscopy and Microanalysis
DOI:
10.1017/s143192760909388x
Date:
July, 2009
File:
PDF, 338 KB
english, 2009