Substrate Doping and Orientation Effects on Dielectric...

MRS Proceedings 1993 / 1 Vol. 303

Substrate Doping and Orientation Effects on Dielectric Growth on Siucon in a Nitrous Oxide Environment

Harrison, H.B., Dimitrijev, S., Sweatman, D., Misiura, A., Reeves, G.K.
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Volume:
303
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-303-417
Date:
January, 1993
File:
PDF, 225 KB
english, 1993
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