Self-Consistent Mosfet Tunneling Simulations—Trends in the...

MRS Proceedings 1999 / 1 Vol. 567

Self-Consistent Mosfet Tunneling Simulations—Trends in the Gate and Substrate Currents and the Drain-Current Turnaround Effect with Oxide Scaling

Massoud, H. Z., Shiely, J. P., Shanware, A.
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Volume:
567
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-567-227
Date:
January, 1999
File:
PDF, 894 KB
english, 1999
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