Stress Induced Lateral Concentration Profiles in SiGe...

Stress Induced Lateral Concentration Profiles in SiGe Layers Grown on Si(001) Non-Planar Substrates

Eshed, Anat, Beserman, Robert, Dettmer, Klauss
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Volume:
664
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-664-a8.3
Date:
January, 2001
File:
PDF, 46 KB
english, 2001
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