500 °C Formation of Poly-Si1-xGex (x≥ 0.5) on SiO2 by...

MRS Proceedings 2002 / 1 Vol. 744

500 °C Formation of Poly-Si1-xGex (x≥ 0.5) on SiO2 by Ion-beam Stimulated Solid Phase Crystallization

Tsunoda, Isao, Kanno, Hiroshi, Kenjo, Atsushi, Sadoh, Taizoh, Miyao, Masanobu
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Volume:
744
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-744-m8.22
Date:
January, 2002
File:
PDF, 92 KB
english, 2002
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