EELS Analysis of InGaN/GaN Heterostructures Using the Ga 3d...

Microscopy and Microanalysis 2004 / 8 Vol. 10; Iss. S02

EELS Analysis of InGaN/GaN Heterostructures Using the Ga 3d Transitions in Epsilon 2

Sanchez, Ana M, Gass, Mhairi H, Papworth, Adam J, Goodhew, Peter J, Ruterana, P
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Volume:
10
Language:
english
Journal:
Microscopy and Microanalysis
DOI:
10.1017/s1431927604881108
Date:
August, 2004
File:
PDF, 133 KB
english, 2004
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