Comparison of Localized Modifications of the Contact Potential Difference Induced by Focussed Ion Beam Processing of n and p Doped Silicon.
Stevens-Kalceff, MA, Kruss, DPVolume:
12
Language:
english
Journal:
Microscopy and Microanalysis
DOI:
10.1017/s1431927606068449
Date:
August, 2006
File:
PDF, 130 KB
english, 2006