Characterization with TEM of AlN/GaN Heterostructures for...

Microscopy and Microanalysis 2008 / 8 Vol. 14; Iss. S2

Characterization with TEM of AlN/GaN Heterostructures for Implant Activation Annealing

Zheleva, TS, Hager, CE, Jones, KA, Derenge, MA
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Volume:
14
Language:
english
Journal:
Microscopy and Microanalysis
DOI:
10.1017/s1431927608085553
Date:
August, 2008
File:
PDF, 205 KB
english, 2008
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