In Situ Studies of the Interaction of Dislocations with Point Defects during Annealing of Ion Implanted Si/SiGe/Si (001) Heterostructures
Stach, Eric A., Hull, Robert, Bean, John C., Jones, Kevin S., Nejim, AhmedVolume:
4
Language:
english
Journal:
Microscopy and Microanalysis
DOI:
10.1017/s1431927698980308
Date:
June, 1998
File:
PDF, 2.44 MB
english, 1998