GaN HFET MMICs with integrated Schottky-diode for highly...

International Journal of Microwave and Wireless Technologies 2011 / 6 Vol. 3; Iss. 3

GaN HFET MMICs with integrated Schottky-diode for highly efficient digital switch-mode power amplifiers at 2 GHz

Maroldt, Stephan, Quay, Rüdiger, Haupt, Christian, Kiefer, Rudolf, Wiegner, Dirk, Ambacher, Oliver
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Volume:
3
Language:
english
Journal:
International Journal of Microwave and Wireless Technologies
DOI:
10.1017/s1759078711000304
Date:
June, 2011
File:
PDF, 636 KB
english, 2011
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