Forming-free Resistance Random Access Memory Using...

MRS Proceedings 2012 / 1 Vol. 1430

Forming-free Resistance Random Access Memory Using Ta2O5/TaOx Bi-layer Prepared by Magnetron Sputtering Method

Fukuda, Natsuki, Fukuju, Kazunori, Yogosawa, Isamu, Horita, Kazumasa, Kikuchi, Shin, Nishioka, Yutaka, Suu, Koukou
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
1430
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/opl.2012.1021
Date:
January, 2012
File:
PDF, 558 KB
english, 2012
Conversion to is in progress
Conversion to is failed