Comparison of channel mobility and oxide properties of...

MRS Proceedings 2014 Vol. 1693

Comparison of channel mobility and oxide properties of MOSFET devices on Si-face (0001) and A-face (11-20) 4H-SiC

Lichtenwalner, Daniel J., Cheng, Lin, Allen, Scott, Palmour, John W., Lelis, Aivars, Scozzie, Charles
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Volume:
1693
Year:
2014
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/opl.2014.530
File:
PDF, 642 KB
english, 2014
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