On the Origin of the New Electron Traps Induced By Rapid...

MRS Proceedings 1988 / 1 Vol. 144

On the Origin of the New Electron Traps Induced By Rapid Thermal Annealing in GaAs Using Capping Proximity Technique.

Marrakchi, G., Chaussemy, G., Laugier, A., Guillot., G.
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Volume:
144
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-144-27
Date:
January, 1988
File:
PDF, 454 KB
english, 1988
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