Material and Device Properties of 3” Diameter GaAs-on-Si...

MRS Proceedings 1988 / 1 Vol. 144

Material and Device Properties of 3” Diameter GaAs-on-Si with Buried P-type Layers

Pearton, S. J., Lee, K. M., Haegel, N. M., Huang, C.-J., Nakahara, S., Ren, F., Scarpelli, V., Short, K. T., Vernon, S. M.
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Volume:
144
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-144-317
Date:
January, 1988
File:
PDF, 697 KB
english, 1988
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