Annealing of Ion Implanted Tin in Silicon: a RBS/...

Annealing of Ion Implanted Tin in Silicon: a RBS/ Channeling, Mössbauer Spectroscopy and Tem Investigation of Solubility and Residual Defects.

Kringhøj, P., Nylandsted Larsen, A., Petersen, J. W.
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Volume:
163
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-163-585
Date:
January, 1989
File:
PDF, 675 KB
english, 1989
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