Submicron P-Channel Mos Devices with Boron Doped...

MRS Proceedings 1990 / 1 Vol. 182

Submicron P-Channel Mos Devices with Boron Doped Polysilicon Gates Fabricated by Rapid Thermal Processing

Kugelmass, Sheldon M., Krusius, J. Peter
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Volume:
182
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-182-293
Date:
January, 1990
File:
PDF, 291 KB
english, 1990
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