Fabrication of Device-Quality Wide-Gap a-Si:H Films at Very...

MRS Proceedings 1990 / 1 Vol. 192

Fabrication of Device-Quality Wide-Gap a-Si:H Films at Very Low Substrate Temperatures

Hishikawa, Yoshihiro, Tsuge, Sadaji, Nakamura, Noboru, Tsuda, Shinya, Nakano, Shoichi, Ohnishi, Michitoshi, Kuwano, Yukinori
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Volume:
192
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-192-511
Date:
January, 1990
File:
PDF, 367 KB
english, 1990
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