Simulations of Ge+ and C+ Implantations to form SiGe/Si HBT and Characterization of SiGe and SiGeC Diodes
Gupta, Ashawant, Waters, Jeffrey W., Cook, Carmen, Yang, Cary Y., Fukamia, Akira, Shoji, Ken-Ichi, Nagano, TakahiroVolume:
220
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-220-489
Date:
January, 1991
File:
PDF, 294 KB
english, 1991